Electronic band structures and effective-mass parameters of wurtzite GaN and InN
نویسندگان
چکیده
منابع مشابه
Band transitions in wurtzite GaN and InN determined by valence electron energy loss spectroscopy
Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7G0.2 eV) and for wurtzite GaN at (3.3G 0.2 eV) that are ascribed to the fundam...
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The theoretical models for calculations of band structure of wurtzite InN have been studied. Several models including nearly free electron model, pseudopotional method, Tight-Binding moethod and k·p method will be discussed. Currently most InN epitaxial films grown on GaN or sapphire substrate have wurtzite structure. To study the symmetry properties of the electron wave function in wurtzite st...
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Built-in/internal fields in Wurtzite quantum dots originate mainly from: (1) the fundamental crystal atomicity and the interfaces between two dissimilar materials, (2) the strain relaxation, (3) the piezoelectricity, and (4) the spontaneous polarization/pyroelectricity. In this paper, using the atomistic NEMO 3-D simulator, we study the influence of these four competing internal fields on the e...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1998
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.366847